Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off tran...

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Bibliographic Details
Main Authors: Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Energies
Subjects:
cascade
flyback converter
GaN
gate driver
E-mode
Online Access:https://www.mdpi.com/1996-1073/14/18/5966

Internet

https://www.mdpi.com/1996-1073/14/18/5966

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