Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
Abstract In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)...
Main Authors: | , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2021-01-01
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Series: | npj 2D Materials and Applications |
Online Access: | https://doi.org/10.1038/s41699-020-00187-9 |