Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2012-01-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.2.011002 |