Surface Passivation of Crystalline Silicon Wafer Using H<sub>2</sub>S Gas

Surface Passivation of Crystalline Silicon Wafer Using H<sub>2</sub>S Gas

We report the effects of H<sub>2</sub>S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H<sub>2</sub>S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs)...

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Bibliographic Details
Main Authors: Jian Lin, Hongsub Jee, Jangwon Yoo, Junsin Yi, Chaehwan Jeong, Jaehyeong Lee
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Applied Sciences
Subjects:
crystalline silicon
H<sub>2</sub>S
minority carrier lifetime
passivation
dangling bonds
Online Access:https://www.mdpi.com/2076-3417/11/8/3527

Internet

https://www.mdpi.com/2076-3417/11/8/3527

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