Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/epjconf/201713203059 |