Subthreshold electron transport properties of ultrathin film phase change material Ge2Sb2Te5
The electron transport properties of ultra-scaled phase change material Ge2Sb2Te5 (GST) are investigated in a subthreshold bias range. We used ab-initio molecular dynamics (AIMD) and non-equilibrium Green’s function (NEGF) transport formalism based on density functional theory (DFT). We calculate th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5089798 |