Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally an...

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Bibliographic Details
Main Authors: Tongbo Wei, Lian Zhang, Xiaoli Ji, Junxi Wang, Ziqiang Huo, Baojun Sun, Qiang Hu, Xuecheng Wei, Ruifei Duan, Lixia Zhao, Yiping Zeng, Jinmin Li
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Photonics Journal
Subjects:
Light-emitting diodes
Optical devices
Online Access:https://ieeexplore.ieee.org/document/6939631/

Internet

https://ieeexplore.ieee.org/document/6939631/

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