Influence of MOSFET parasitic parameters on LLC resonant converter performance

Influence of MOSFET parasitic parameters on LLC resonant converter performance

For the influence of the parasitic parameters of MOSFET on the performance of LLC resonant circuit, the equivalent analysis of the parasitic capacitance of MOSFET is first carried out. Based on this equivalent model, in the LLC resonant conversion circuit, due to the existence of parasitic parameter...

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Bibliographic Details
Main Authors: Shen Hua, Zhen Haohan, Tong Tao, Shen Peigang, Chen Haimin, Chen Shengze
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2021-01-01
Series:Dianzi Jishu Yingyong
Subjects:
parasitic parameters
llc resonant circuit
angelov model
output gain
resonant frequency
Online Access:http://www.chinaaet.com/article/3000128037

Internet

http://www.chinaaet.com/article/3000128037

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