Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si
Hole traps in hydride vapor phase epitaxy β-Ga2O3 films were studied by deep level transient spectroscopy with electrical and optical excitation (DLTS and ODLTS) and by photocapacitance and temperature dependence measurements. Irradiation with 20 MeV protons creates deep electron and hole traps, a s...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5042646 |