TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path

TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path

We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage...

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Bibliographic Details
Main Authors: Yu Zhou, Tomohito Kawashima, Diing Shenp Ang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High-k oxide
negative photoconductivity
optical sensor
plasmonic sensor
soft electrical-breakdown
silicon dioxide
Online Access:https://ieeexplore.ieee.org/document/7872399/

Internet

https://ieeexplore.ieee.org/document/7872399/

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