Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films
Wide bandgap (Eg ∼ 3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (∼320 cm2 V−1 s−1) with a high carrier concentration (∼1020 cm−3). For this reason, many researchers have fa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054154 |