First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements

First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements

Electronic properties of cubic boron nitride (c-BN) doped with group IIA elements were systematically investigated using the first principle calculation based on density functional theory. The electronic bandgap of c-BN was found to be narrowed when the impurity atom substituted either the B (IIA→B)...

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Bibliographic Details
Main Authors: Yubo Li, Pengtao Wang, Fei Hua, Shijie Zhan, Xiaozhi Wang, Jikui Luo, Hangsheng Yang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5019955

Internet

http://dx.doi.org/10.1063/1.5019955

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