First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements
Electronic properties of cubic boron nitride (c-BN) doped with group IIA elements were systematically investigated using the first principle calculation based on density functional theory. The electronic bandgap of c-BN was found to be narrowed when the impurity atom substituted either the B (IIA→B)...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-03-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5019955 |