A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential

A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential

We prepared a nonvolatile memory device that could be reversibly switched between a high and a low open-circuit voltage (Voc) regime. The device is composed of a solid electrolyte Li3PO4 film sandwiched between metal Li and Au electrodes: a Li/Li3P...

Full description

Bibliographic Details
Main Authors: Issei Sugiyama, Ryota Shimizu, Tohru Suzuki, Kuniko Yamamoto, Hideyuki Kawasoko, Susumu Shiraki, Taro Hitosugi
Format: Article
Language:English
Published: AIP Publishing LLC 2017-04-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4980031

Internet

http://dx.doi.org/10.1063/1.4980031

Similar Items