A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation

A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation

In this paper, we study the recovery of onmembrane semiconductor components, such as N-type Field-Effect Transistors (FETs) available in two different channel widths and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after the exposure to high dose of proton radiation. Due to the ionizin...

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Bibliographic Details
Main Authors: Francis Laurent A., Sedki Amor, André Nicolas, Kilchytska Valéria, Gérard Pierre, Ali Zeeshan, Udrea Florin, Flandre Denis
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:EPJ Web of Conferences
Subjects:
Field Effect Transistors (FETs)
In situ annealing
Micro-hotplates
Proton radiation
Radiation mitigation
Online Access:https://doi.org/10.1051/epjconf/201817001006

Internet

https://doi.org/10.1051/epjconf/201817001006

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