Design of harmonic tuned power amplifier based on dynamic load-line GaN HEMT model
Based on the dynamic load-line GaN HEMT large signal model and load-pull technology, a high efficiency harmonic tuned power amplifier operating at 2 GHz is designed and implemented. Under the condition that the parasitic parameters and package parameters of the transistor are unknown, the optimal fu...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2020-02-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000114833 |