Design of harmonic tuned power amplifier based on dynamic load-line GaN HEMT model

• Main Authors: Huang Faliang, You Bin
• Format: Article
• Language: zho
• Published: National Computer System Engineering Research Institute of China 2020-02-01
• Series: Dianzi Jishu Yingyong
• Subjects: dynamic load-line large signal model; load-pull; harmonic tuned; power amplifier
• Online Access: http://www.chinaaet.com/article/3000114833

Based on the dynamic load-line GaN HEMT large signal model and load-pull technology, a high efficiency harmonic tuned power amplifier operating at 2 GHz is designed and implemented. Under the condition that the parasitic parameters and package parameters of the transistor are unknown, the optimal fundamental and harmonic impedance values that meet the performance requirements are initially determined by the load-pull technology, and tuning and optimizing the overall circuit of the power amplifier based on the drain current and voltage waveforms obtained from the dynamic load-line large signal model. The measured results show that, when the input power is 27 dBm, the drain efficiency reaches 81.53%, the power added efficiency is 76%, the output power is 38.69 dBm, and the gain is 11.69 dB. The high-efficiency harmonic tuned power designed by this method has the advantages of simple structure and convenient tuning, while satisfying high performance.