Design of harmonic tuned power amplifier based on dynamic load-line GaN HEMT model
Based on the dynamic load-line GaN HEMT large signal model and load-pull technology, a high efficiency harmonic tuned power amplifier operating at 2 GHz is designed and implemented. Under the condition that the parasitic parameters and package parameters of the transistor are unknown, the optimal fu...
Main Authors: | Huang Faliang, You Bin |
---|---|
Format: | Article |
Language: | zho |
Published: |
National Computer System Engineering Research Institute of China
2020-02-01
|
Series: | Dianzi Jishu Yingyong |
Subjects: | |
Online Access: | http://www.chinaaet.com/article/3000114833 |
Similar Items
-
Novel Integrated Class F Power Amplifier Design for RF Power Infrastructure Applications
by: Tushar Sharma, et al.
Published: (2018-01-01) -
X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit
by: Kyung-Tae Bae, et al.
Published: (2017-11-01) -
NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS
by: Jang, Haedong
Published: (2014) -
GaN HEMT and MMIC Design and Evaluation
by: Aroshvili, Giorgi
Published: (2008) -
Gate Bias Control and Harmonic Load Modulation for a Doherty Amplifier
by: Smith, Karla Jenny Isabella
Published: (2009)