The dualism between adatom- and vacancy-based single crystal growth models
In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-13188-0 |