Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

The low-temperature annealing process has a critical impact on the electrical performance of thin-film transistors (TFTs). This paper reports significant performance enhancements of TFTs using a femtosecond laser pre-annealing (FLA)-based preparation method. The solution-processed In<sub>2<...

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Bibliographic Details
Main Authors: Fei Shan, Hao-Zhou Sun, Jae-Yun Lee, Seungmoon Pyo, Sung-Jin Kim
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
In₂O₃
thin-film transistors
solution process
femtosecond laser
low-temperature
annealing process
Online Access:https://ieeexplore.ieee.org/document/9345682/

Internet

https://ieeexplore.ieee.org/document/9345682/

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