Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

In this paper, zirconium−aluminum−oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtaine...

Full description

Bibliographic Details
Main Authors: Zhihao Liang, Shangxiong Zhou, Wei Cai, Xiao Fu, Honglong Ning, Junlong Chen, Weijian Yuan, Zhennan Zhu, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Coatings
Subjects:
solution method
zirconium–aluminum–oxide
mixed precursor
high dielectric constant
metal oxide thin-film transistor
Online Access:https://www.mdpi.com/2079-6412/10/3/282

Internet

https://www.mdpi.com/2079-6412/10/3/282

Similar Items