Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of...

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Bibliographic Details
Main Authors: Lijuan Wang, Liyao Zhang, Li Yue, Dan Liang, Xiren Chen, Yaoyao Li, Pengfei Lu, Jun Shao, Shumin Wang
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Crystals
Subjects:
dilute bismide
III-N-Bi
III-P-Bi
III-As-Bi
III-Sb-Bi
MBE
MOCVD
surfactant
droplet
bandgap reduction
GaAsBi lasers
In(Ga)AsBi detectors
InSbBi detectors
Online Access:http://www.mdpi.com/2073-4352/7/3/63

Internet

http://www.mdpi.com/2073-4352/7/3/63

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