Tensoelectrical Properties of Electron-Irradiated N-Si Single Crystals
Tensoresistance at uniaxial pressure for electron-irradiated n-Si single crystals at room temperature has been studied. Silicon single crystals for research were doped with phosphorus, concentration Nd=2.2·1016 cm-3, and irradiated by the electron flows of 5·1016 el./cm2, 1·1017 el./cm2 and 2·1017...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2021-09-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/17746 |