Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition meth...

Full description

Bibliographic Details
Main Authors: Chi-Chang Wu, Hsin-Chiang You, Yu-Hsien Lin, Chia-Jung Yang, Yu-Ping Hsiao, Tun-Po Liao, Wen-Luh Yang
Format: Article
Language:English
Published: MDPI AG 2018-02-01
Series:Materials
Subjects:
ECM
resistive memory
ReRAM
chemical displacement
Cu-CDT
Online Access:http://www.mdpi.com/1996-1944/11/2/265

Internet

http://www.mdpi.com/1996-1944/11/2/265

Similar Items