Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

We propose to use a bilayer insulator (2.5 nm Al<sub>2</sub>O<sub>3</sub> + 35 nm SiO2) as an alternative to a conventional uni-layer Al<sub>2</sub>O<sub>3</sub> (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical tren...

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Bibliographic Details
Main Authors: Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Materials
Subjects:
GaN
vertical GaN
trench MOS
gate dielectric
breakdown
trapping
Online Access:https://www.mdpi.com/1996-1944/13/21/4740

Internet

https://www.mdpi.com/1996-1944/13/21/4740

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