APA (7th ed.) Citation

Mukherjee, K., Santi, C. D., Borga, M., You, S., Geens, K., Bakeroot, B., . . . Meneghini, M. (2020). Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. MDPI AG.

Chicago Style (17th ed.) Citation

Mukherjee, Kalparupa, et al. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. MDPI AG, 2020.

MLA (8th ed.) Citation

Mukherjee, Kalparupa, et al. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. MDPI AG, 2020.

Warning: These citations may not always be 100% accurate.