Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
We propose to use a bilayer insulator (2.5 nm Al<sub>2</sub>O<sub>3</sub> + 35 nm SiO2) as an alternative to a conventional uni-layer Al<sub>2</sub>O<sub>3</sub> (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical tren...
Main Authors: | Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-10-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/21/4740 |
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