Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion
The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) sphe...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2018-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2018/9326408 |