Time-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors

Time-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors

<p>The time-resolved photoluminescence of donor Si-doped GaAs/Al<em><sub>x</sub></em>Ga<sub>1-<em>x</em></sub>As (<em>x </em>= 0.3 0.25, 0.2, 0.1) structures designed for microwave and terahertz detectors have been investigated at <...

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Bibliographic Details
Main Authors: Aurimas ČERŠKUS, Viktorija NARGELIENĖ, Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Format: Article
Language:English
Published: Kaunas University of Technology 2014-06-01
Series:Medžiagotyra
Subjects:
GaAs
AlGaAs
heterostructures
photoluminescence
lifetime
exciton
time-resolved photoluminescence
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/6317

Internet

http://matsc.ktu.lt/index.php/MatSc/article/view/6317

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