Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters

Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters

We investigate stability of the spin exclusive or (XOR) gate operation in silicon(Si) -based lateral spin devices whose spin transport properties have large variations. The optimum charge current, I0, for the spin XOR gate operation is calculated by using the one dimensional spin-drift-diffusion mod...

Full description

Bibliographic Details
Main Authors: Ryoma Ishihara, Soobeom Lee, Yuichiro Ando, Ryo Ohshima, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi
Format: Article
Language:English
Published: AIP Publishing LLC 2019-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5129980

Internet

http://dx.doi.org/10.1063/1.5129980

Similar Items