Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region
Electrostatic discharge (ESD) transient events can often damage semiconductor components. Therefore, the ultrahigh-voltage (UHV) circular n-channel lateral diffused metal-oxide-semiconductor transistor (nLDMOS) usually used in power electronics needs to have ESD self-protection capabilities. In this...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9506849/ |