A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs
AlGaN/GaN-Si based MIS-HEMTs are considered as the popular candidates for application in the 5G communication system due to their competitive characteristics and low cost. Ohmic contact, as an important fabrication process, significantly affects the performance of the device. In this study, the ohmi...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9314701/ |