Analytical study of substrate parasitic effects in common-base and common-emitter SiGe BHT amplifiers

Analytical study of substrate parasitic effects in common-base and common-emitter SiGe BHT amplifiers

An analytical study to quantify the substrate parasitic effects on SiGe HBT amplifiers in both common-base and common-emitter configuration is presented. The power gain relations and stability factors are derived from the modelled S-parameters which are computed at a fixed bias point from the small-...

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Bibliographic Details
Main Authors: Neti V L Narasimha Murty, M. Hemalata Rao
Format: Article
Language:English
Published: Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo
Series:Journal of Microwaves, Optoelectronics and Electromagnetic Applications
Subjects:
Common-base
Common-emitter
Maximum Available Gain (MAG)
Maximum Stable Gain (MSG)
Scattering parameters
SiGe HBT
Stability factor
Substrate parasitics
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742013000100017&lng=en&tlng=en

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http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742013000100017&lng=en&tlng=en

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