Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium
Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at l...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5022876 |