An Advection-Diffusion Model for the Vacancy Migration Memristor
This paper proposes the advection-diffusion equation for modeling the bipolar memristor. The model identifies limiters to switching speed, reproduces general experimental results including those relating temperature dependence of I-V curves, and abstracts the contemporary dual variable resistor mode...
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| Format: | Article |
| Language: | English |
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IEEE
2016-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/7707442/ |