Compact MOSFET Modeling for Process Variability-Aware VLSI Circuit Design

Compact MOSFET Modeling for Process Variability-Aware VLSI Circuit Design

This paper presents a systematic methodology to develop compact MOSFET models for process variability-aware VLSI circuit design. Process variability in scaled CMOS technologies severely impacts the functionality, yield, and reliability of advanced integrated circuit devices, circuits, and systems. T...

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Bibliographic Details
Main Author: Samar K. Saha
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Access
Subjects:
Process variability
local variations
global variations
variability modeling
mismatch modeling
BSIM4 MOSFET model
Online Access:https://ieeexplore.ieee.org/document/6732881/

Internet

https://ieeexplore.ieee.org/document/6732881/

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