Effective Landé factors for an electrostatically defined quantum point contact in silicene

Abstract The transconductance and effective Landé $$g^*$$ g ∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the $$g^*$$ g ∗ factor for in-plane magnetic field from the nominal...

Full description

Bibliographic Details
Main Authors: Bartłomiej Rzeszotarski, Alina Mreńca-Kolasińska, François M. Peeters, Bartłomiej Szafran
Format: Article
Language:English
Published: Nature Publishing Group 2021-10-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-99074-6