Dielectric properties of highly resistive GaN crystals grown by ammonothermal method at microwave frequencies
Permittivity, the dielectric loss tangent and conductivity of semi-insulating Gallium Nitride crystals have been measured as functions of frequency from 10 GHz to 50 GHz and temperature from 295 to 560 K employing quasi TE0np mode dielectric resonator technique. Crystals were grown using ammonotherm...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4944750 |