Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

The 65 nm Static Random Access Memory (SRAM) based Field Programmable Gate Array (FPGA) was designed and manufactured, which employed tradeoff radiation hardening techniques in Configuration RAMs (CRAMs), Embedded RAMs (EBRAMs) and flip-flops. This radiation hardened circuits include large-spacing i...

Full description

Bibliographic Details
Main Authors: Chang Cai, Xue Fan, Jie Liu, Dongqing Li, Tianqi Liu, Lingyun Ke, Peixiong Zhao, Ze He
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Electronics
Subjects:
FPGA
radiation hardening
single event upsets
heavy ions
error rates
Online Access:http://www.mdpi.com/2079-9292/8/3/323

Internet

http://www.mdpi.com/2079-9292/8/3/323

Similar Items