Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i.e., oxide thickness, t<sub>ox</sub>, and c...

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Bibliographic Details
Main Authors: A. Ruiz, C. Couso, N. Seoane, M. Porti, A. J. Garcia-Loureiro, M. Nafria
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
CAFM
high-k
MOSFET variability
polycrystalline dielectric
defect density
3D device simulations
Online Access:https://ieeexplore.ieee.org/document/9462835/

Internet

https://ieeexplore.ieee.org/document/9462835/

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