Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Abstract This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observe...

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Bibliographic Details
Main Authors: Ihor I. Izhnin, Olena I. Fitsych, Anton A. Pishchagin, Andrei P. Kokhanenko, Alexander V. Voitsekhovskii, Stanislav M. Dzyadukh, Alexander I. Nikiforov
Format: Article
Language:English
Published: SpringerOpen 2017-02-01
Series:Nanoscale Research Letters
Subjects:
GeSi
Molecular-beam epitaxy
Quantum dot
Admittance spectroscopy
Energy levels of spatial quantization
Online Access:http://link.springer.com/article/10.1186/s11671-017-1916-0

Internet

http://link.springer.com/article/10.1186/s11671-017-1916-0

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