Quantum-Mechanical Analysis of Amorphous Oxide-Based Thin-Film Transistors
In this paper, we analyzed the electrical characteristics of amorphous oxide-based thin-film transistors (TFTs) with extremely thin active layers using a quantum-mechanical method (density gradient method) and a technology computer-aided design simulator. We observed that the evaluation of the TFT p...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/7873256/ |