Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analy...

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Bibliographic Details
Main Authors: Yorinobu Kunimune, Yasuhiro Shimada, Yusuke Sakurai, Masao Inoue, Akio Nishida, Bin Han, Yuan Tu, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Fumiko Yano, Yasuyoshi Nagai, Toshiharu Katayama, Takashi Ide
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4948558

Internet

http://dx.doi.org/10.1063/1.4948558

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