Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analy...
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doaj-57a2485943bc4ac08b7b85867fab6c202020-11-24T21:09:08ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045121045121-710.1063/1.4948558085604ADVQuantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomographyYorinobu Kunimune0Yasuhiro Shimada1Yusuke Sakurai2Masao Inoue3Akio Nishida4Bin Han5Yuan Tu6Hisashi Takamizawa7Yasuo Shimizu8Koji Inoue9Fumiko Yano10Yasuyoshi Nagai11Toshiharu Katayama12Takashi Ide13Technology Division, Renesas Semiconductor Manufacturing Co., Ltd., Ibaraki 312-8504, JapanTechnology Division, Renesas Semiconductor Manufacturing Co., Ltd., Ibaraki 312-8504, JapanTechnology Division, Renesas Semiconductor Manufacturing Co., Ltd., Ibaraki 312-8504, JapanDevice Technology Division, Renesas Electronics Corporation, Ibaraki 312-8504, JapanDevice Technology Division, Renesas Electronics Corporation, Ibaraki 312-8504, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanGraduate School of Science and Engineering, Tokyo Institute of Technology, Tokyo 152-8552, JapanThe Oarai Center, Institute for Materials Research, Tohoku University, Ibaraki 311-1313, JapanTechnology Division, Renesas Semiconductor Manufacturing Co., Ltd., Ibaraki 312-8504, JapanTechnology Division, Renesas Semiconductor Manufacturing Co., Ltd., Ibaraki 312-8504, JapanWe have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %). Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA), which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.http://dx.doi.org/10.1063/1.4948558 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yorinobu Kunimune Yasuhiro Shimada Yusuke Sakurai Masao Inoue Akio Nishida Bin Han Yuan Tu Hisashi Takamizawa Yasuo Shimizu Koji Inoue Fumiko Yano Yasuyoshi Nagai Toshiharu Katayama Takashi Ide |
spellingShingle |
Yorinobu Kunimune Yasuhiro Shimada Yusuke Sakurai Masao Inoue Akio Nishida Bin Han Yuan Tu Hisashi Takamizawa Yasuo Shimizu Koji Inoue Fumiko Yano Yasuyoshi Nagai Toshiharu Katayama Takashi Ide Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography AIP Advances |
author_facet |
Yorinobu Kunimune Yasuhiro Shimada Yusuke Sakurai Masao Inoue Akio Nishida Bin Han Yuan Tu Hisashi Takamizawa Yasuo Shimizu Koji Inoue Fumiko Yano Yasuyoshi Nagai Toshiharu Katayama Takashi Ide |
author_sort |
Yorinobu Kunimune |
title |
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography |
title_short |
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography |
title_full |
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography |
title_fullStr |
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography |
title_full_unstemmed |
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography |
title_sort |
quantitative analysis of hydrogen in sio2/sin/sio2 stacks using atom probe tomography |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2016-04-01 |
description |
We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %). Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA), which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale. |
url |
http://dx.doi.org/10.1063/1.4948558 |
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