Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs

Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs

In this paper, we systematically evaluate dc/ac performances of sub-7-nm node fin field-effect transistors (FinFETs) and nanosheet FETs (NSFETs) using fully calibrated 3-D TCAD. The stress effects of all the devices were carefully considered in terms of carrier mobility and velocity averaged within...

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Bibliographic Details
Main Authors: Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FinFET
NSFET
RC delay
stress effect
carrier mobility
parasitic capacitance
Online Access:https://ieeexplore.ieee.org/document/8438881/

Internet

https://ieeexplore.ieee.org/document/8438881/

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