Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that...

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Bibliographic Details
Main Authors: Dmitrii V. Andreev, Gennady G. Bondarenko, Vladimir V. Andreev, Alexander A. Stolyarov
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Sensors
Subjects:
MOS sensor
RADFET
gate dielectric
ionization radiation
high-field
absorbed dose
Online Access:https://www.mdpi.com/1424-8220/20/8/2382

Internet

https://www.mdpi.com/1424-8220/20/8/2382

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