Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a larg...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5035085 |