Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt

Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt

Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a larg...

Full description

Bibliographic Details
Main Authors:	Sadid Muneer, Jake Scoggin, Faruk Dirisaglik, Lhacene Adnane, Adam Cywar, Gokhan Bakan, Kadir Cil, Chung Lam, Helena Silva, Ali Gokirmak
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5035085

Similar Items

Local structure of amorphous and crystalline Ge2Sb2Te5 films
by: Юрий Александрович Петрушин, et al.
Published: (2021-06-01)

Atmospheric pressure microplasmas in ZnO nanoforests under high voltage stress
by: Nafisa Noor, et al.
Published: (2015-09-01)

Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5
by: Konstantinos Konstantinou, et al.
Published: (2019-07-01)

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications
by: Lei Wang, et al.
Published: (2018-05-01)

Synthesis of metastable NiGe2 by mechanical alloying
by: Ahmed A. Al-Joubori, et al.
Published: (2015-12-01)

First-sharp diffraction peaks in amorphous GeTe and Ge2Sb2Te5 films prepared by vacuum-thermal deposition
by: Toshihiro Nakaoka, et al.
Published: (2012-12-01)

ON PROSPECTS OF PRODUCTION AND APPLICATION OF AMORPHOUS CHALCOGENIDE FILMS GeSbTe
by: S.A. Baturkin
Published: (2015-11-01)

Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy
by: Jos E. Boschker, et al.
Published: (2017-01-01)

Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
by: Byeong-Seon An
Published: (2019-12-01)

Metastable amorphous phase of tellurium-base alloys
by: Luo, Huey-Lin
Published: (1964)

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
by: Ting-Ting Jiang, et al.
Published: (2019-08-01)

Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices
by: Bragaglia, Valeria
Published: (2017)

Transformations among metastable amorphous and crystalline forms of silicon
by: Daisenberger, D.
Published: (2011)

The study of magnetism in Ge/Sb,Ge/Bi,Ge/SiO2 and Si/SiO2 systems
by: En-yu Chao, et al.
Published: (2013)

First-principles study of the properties for crystal Ge2Sb2Te5 with Ge vacancy
by: Fei Yang, et al.
Published: (2018-06-01)

Optically induced metastable defect states in amorphous silicon dioxide
by: Stathis, James Henry
Published: (2005)

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory
by: Austin Deschenes, et al.
Published: (2016-11-01)

Epitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices
by: Wang, Rui Ning
Published: (2017)

Amorphized length and variability in phase-change memory line cells
by: Nafisa Noor, et al.
Published: (2020-10-01)

Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5
by: Vinod, E M
Published: (2018)

Sb2 diffusion on the Ge(100) surface upon laser heating
by: Huang, Mei-ching, et al.
Published: (2013)

Dielectric spectroscopic investigation of reversible photo-induced changes in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Se<sub>5</sub> thin films
by: Obeng, Yaw S, et al.
Published: (2022)

Thermoreflectance of amorphous GeTe
by: Kottke, Michael Lee, 1947-
Published: (1974)

Laser-induced phase transitions of Ge2Sb2Te5 thin films
by: Cheng Hung Chu, et al.
Published: (2010)

Suppressed electronic contribution in thermal conductivity of Ge2Sb2Se4Te
by: Aryana, Kiumars, et al.
Published: (2022)

Dielectric properties of GeSbSe glasses prepared by the conventional melt-quenching method
by: N. Nedelcu, et al.
Published: (2020-03-01)

The Physic Properties and Applications of Metastable SiGe Nano Crystalline Thin Films
by: Yao-tsung Ouyang, et al.
Published: (2015)

Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum
by: Tao Li, et al.
Published: (2018-02-01)

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
by: A. M. Mio, et al.
Published: (2017-06-01)

Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity
by: S. Privitera, et al.
Published: (2013-01-01)

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process
by: Jingbo Xu, et al.
Published: (2018-05-01)

Simulative Investigation on the Electronic, Vibrational and Optical Properties of the Ge2Sb2Te5 Chalcogenide
by: Tsafack Tsopbeng, Thierry Bienvenu <1982>
Published: (2010)

Preparation of Single-crystalline Ge2Sb2Te5 Nanowire and Its Electromigration Behaviors
by: Yeh, Chi-Jui, et al.
Published: (2016)

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
by: Junji Tominaga, et al.
Published: (2015-02-01)

Titanium germanium antimonide, TiGeSb
by: Robert Lam, et al.
Published: (2009-09-01)

I8Sb10Ge36
by: Mohammed Kars, et al.
Published: (2010-06-01)

Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb2Te3 superlattices
by: Zhe Yang, et al.
Published: (2017-12-01)

Controlled growth of SbSI thin films from amorphous Sb2S3 for low-temperature solution processed chalcohalide solar cells
by: Yong Chan Choi, et al.
Published: (2018-12-01)

Stability, Reactivity, and Constituent Interaction in TiSe2-Based Metastable Misfit Layer Compounds Synthesized from Designed Amorphous Precursors
by: Merrill, Devin
Published: (2016)

Active control of anapole states by structuring the phase-change alloy Ge2Sb2Te5
by: Jingyi Tian, et al.
Published: (2019-01-01)