Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

The transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO<sub>2</sub>/p<sup>+</sup>-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the me...

Full description

Bibliographic Details
Main Authors: Jun Tae Jang, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Electronics
Subjects:
a-igzo memristor
schottky barrier tunneling
non filamentary resistive switching
gradual and abrupt modulation
bimodal distribution of effective schottky barrier height
ionized oxygen vacancy
Online Access:https://www.mdpi.com/2079-9292/8/10/1087

Internet

https://www.mdpi.com/2079-9292/8/10/1087

Similar Items