Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes

Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes

This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model o...

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Bibliographic Details
Main Author: Jiri Petrzela
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Entropy
Subjects:
chaos
Lyapunov exponents
multiple-valued
static memory
strange attractors
Online Access:http://www.mdpi.com/1099-4300/20/9/697

Internet

http://www.mdpi.com/1099-4300/20/9/697

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